On Optimal Truncated Biharmonic Current Waveforms for Class-F and Inverse Class-F Power Amplifiers
نویسندگان
چکیده
منابع مشابه
Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology
In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7–2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10W (...
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ژورنال
عنوان ژورنال: Mathematical Problems in Engineering
سال: 2017
ISSN: 1024-123X,1563-5147
DOI: 10.1155/2017/1390295